Méthode d'identification fréquentielle et commande robuste de type Hinfini d'un procédé d'élaboration de monocristaux = Frequency identification method and Hinfini robust control of a crystal growth processPoinard, Franck; Metrat, G.1995, 165 p.Thesis

Influence of valence state, radius of ion and molar ratio of directing salt on WO₃·0.33H₂O crystal morphologyXIAOYU HE; CHENGUO HU; YI XI et al.Applied surface science. 2013, Vol 265, pp 810-816, issn 0169-4332, 7 p.Article

A study of thermal and dielectric behavior of manganese malonate dihydrate single crystalsMATHEW, Varghese; XAVIER, Lizymol; MAHADEVAN, C. K et al.Journal of thermal analysis and calorimetry. 2011, Vol 105, Num 1, pp 123-127, issn 1388-6150, 5 p.Article

Interplay between Nucleation, Crystallization, and the Gkass TransitionHÖHNE, Günther W. H; SCHICK, Christoph.Thermochimica acta. 2011, Vol 522, Num 1-2, issn 0040-6031, 213 p.Serial Issue

Characteristics of large-sized ruby crystal grown by temperature gradient techniqueCI SONG; YIN HANG; CHANGTAI XIA et al.Optical materials (Amsterdam). 2005, Vol 27, Num 4, pp 699-703, issn 0925-3467, 5 p.Article

Recent research developments in crystal growth (Volume 4, Part I)Pandalai, S. G.2005, isbn 81-7895-172-X, 210 p., isbn 81-7895-172-XBook

Atomistic computer simulation of explosive crystallization in pure silicon and germaniumALBENZE, Erik J; THOMPSON, Michael O; CLANCY, Paulette et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 9, pp 094110.1-094110.10, issn 1098-0121Article

Effects of additives in α- and ⊖-alumina: an ab initio studyWALLIN, Erik; ANDERSSON, Jon M; CHIRITA, Valeriu et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 49, pp 8971-8980, issn 0953-8984, 10 p.Article

ONR Indium Nitride Workshop: Proceedings of the First International Indium Nitride Workshop, 16-20 November 2003, Fremantle, AustraliaBUTCHER, K. S. A.Journal of crystal growth. 2004, Vol 269, Num 1, issn 0022-0248, 184 p.Conference Proceedings

Domaines d'existence et de cristallisation de borates et aluminoborates de gadolinium = Existence domain and crystallization of gadolinium borates and aluminoboratesALOUI-LEBBOU, O; GOUTAUDIER, C; COHEN-ADAD, M. T et al.Journal de physique. IV. 2004, Vol 113, pp 107-110, issn 1155-4339, 4 p.Conference Paper

Analysis of nanometer inclusions in high pressure synthesized diamond single crystalsYIN, Long-Wei; LI, Mu-Sen; GONG, Zhi-Guang et al.Chemical physics letters. 2002, Vol 355, Num 5-6, pp 490-496, issn 0009-2614Article

Growth of langasite family compounds for bulk and saw applicationsADACHI, Masatoshi; SAWADA, Yuzuru; FUNAKAWA, Takeo et al.Ferroelectrics (Print). 2002, Vol 273, pp 89-94, issn 0015-0193Conference Paper

The use of dispersive double crystal monochromator: A way for high-resolution powder diffractometryMIKULA, P; VRANA, M; YONG NAM CHOI et al.Materials science forum. 2002, pp 299-302, issn 0255-5476, isbn 0-87849-900-8Conference Paper

X-ray diffraction residual stress analyses on a copper coating realized by inert plasma sprayGASSOT, H; JUNQUERA, T; JI, V et al.Materials science forum. 2002, pp 425-430, issn 0255-5476, isbn 0-87849-900-8Conference Paper

X-ray diffraction residual stress measurement reliability: Stressed reference samplesFERREIRA, C; FRANCOIS, M; GUILLEN, R et al.Materials science forum. 2002, pp 573-578, issn 0255-5476, isbn 0-87849-900-8Conference Paper

CGCT-1 : Proceedings of the First Asian Conference on Crystal Growth and Crystal Technology, Sendai, Japan, 29 August-1 September 2000NAKAJIMA, Kazuo; CAPPER, Peter; DURBIN, Stephen D et al.Journal of crystal growth. 2001, Vol 229, issn 0022-0248, 657 p.Conference Proceedings

Equilibrium point defect concentration in a growing silicon crystalTANAHASHI, K; INOUE, N; AKUTSU, N et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 133-137, issn 0167-9317Conference Paper

Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt-crystal interfaceEVSTRATOV, I. Yu; KALAEV, V. V; DORNBERGER, E et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 139-142, issn 0167-9317Conference Paper

Formation and decay processes of three-dimensional silicon islands on the Si(111) 7 × 7 surfaceHAYASHI, K; ICHIMIYA, A.Applied surface science. 2000, Vol 162-63, pp 37-41, issn 0169-4332Conference Paper

American crystal growth and epitaxy 1999HOPKINS, R; SCRIPA, R; BALAKRISHNA, V et al.Journal of crystal growth. 2000, Vol 211, Num 1-4, issn 0022-0248, 544 p.Conference Proceedings

How to control the self-organization of nanoparticles by bonded thin layersBOURRET, A.Surface science. 1999, Vol 432, Num 1-2, pp 37-53, issn 0039-6028Article

An integrated optical set-up for fluid-physics experiments under microgravity conditionsDUBOIS, F; JOANNES, L; DUPONT, O et al.Measurement science & technology (Print). 1999, Vol 10, Num 10, pp 934-945, issn 0957-0233Article

A large fluid-bridge device to measure the deformation of drops in uniaxial extensional flow fieldsBERG, C. P; DREYER, M; RATH, H. J et al.Measurement science & technology (Print). 1999, Vol 10, Num 10, pp 956-964, issn 0957-0233Article

Single crystal growth, characterization, and applications (Zakopane, 12-16 October 1998)Majchrowski, Andrzej; Zieliński, Jerzy.SPIE proceedings series. 1999, isbn 0-8194-3198-2, XI, 372 p, isbn 0-8194-3198-2Conference Proceedings

Quasi-quantum-wire field-effect transistor fabricated by composition-controlled, selective growth in molecular beam epitaxySUGAYA, T; TAKAHASHI, T; NAKAGAWA, T et al.Journal of crystal growth. 1999, Vol 201202, pp 833-836, issn 0022-0248Conference Paper